BSS123LT3 データシートの表示（PDF） - ON Semiconductor
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BSS123LT3 Datasheet PDF : 4 Pages
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BSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Turn−On Delay Time
Turn−Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
REVERSE DIODE
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol Min Typ Max Unit
V(BR)DSS 100
−
IDSS
IGSS
−
−
−
−
−
−
−
Vdc
mAdc
15
60
50 nAdc
VGS(th)
rDS(on)
gfs
0.8
−
2.8 Vdc
−
5.0 6.0
W
80
−
− mmhos
Ciss
Coss
Crss
−
20
−
pF
−
9.0
−
pF
−
4.0
−
pF
td(on)
td(off)
VSD
−
20
−
ns
−
40
−
ns
−
−
1.3
V
ORDERING INFORMATION
Device
Package
Shipping†
BSS123LT1
SOT−23
3,000 Tape & Reel
BSS123LT1G
SOT−23
(Pb−Free)
3,000 Tape & Reel
BSS123LT3
SOT−23
10,000 Tape & Reel
BSS123LT3G
SOT−23
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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