BT258S-800LT データシートの表示（PDF） - NXP Semiconductors.

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BT258S-800LT

SCR logic level, high temperature

NXP Semiconductors. 

NXP Semiconductors

BT258S-800LT

SCR logic level, high temperature

3. Ordering information

Table 2. Ordering information

Type number Package

Name

Description

BT258S-800LT DPAK

plastic single-ended surface-mounted package (DPAK); 3 leads (one lead

cropped)

Version

SOT428

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

VRRM

IT(AV)

repetitive peak off-state voltage

repetitive peak reverse voltage

average on-state current

half sine wave; Tmb ≤ 135 °C; see

Figure 1

IT(RMS)

RMS on-state current

all conduction angles; see Figure 4

and 5

ITSM

non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to

surge; see Figure 2 and 3

t = 10 ms

t = 8.3 ms

I2t

dIT/dt

IGM

PGM

PG(AV)

Tstg

Tj

I2t for fusing

rate of rise of on-state current

peak gate current

peak gate power

average gate power

storage temperature

junction temperature

tp = 10 ms

ITM = 10 A; IG = 50 mA;

dIG/dt = 50 mA/µs

over any 20 ms period

[1] Operation above Tj = 110 °C may require the use of a gate to cathode resistor of 1 kΩ or less.

Min

-

-

-

-

-

-

-

-

-

−40

[1] -

Max Unit

800

V

800

V

5

A

8

A

75

A

82

A

28

A2s

50

A/µs

2

A

5

W

0.5

W

+150 °C

150

°C

BT258S-800LT_1

Product data sheet

Rev. 01 — 2 September 2008

© NXP B.V. 2008. All rights reserved.

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