BTX18 データシートの表示（PDF） - Unspecified

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BTX18

SILICON THYRISTORS

Unspecified 

BTX18-100/BTX18-200/BTX18-300

BTX18-400/BTX18-500

Symbol

ITRM

ITSM

TJ

Tstg

Ratings

Repetitive Peak on-state Current

Non-repetitive peak on-state current

t=10ms ; TJ=125°C prior to surge

Junction Temperature

Storage Temperature

BTX18- BTX18- BTX18- BTX18- BTX18-

100

200

300

400

500

Max : 10

A

10 A

V

Max : 125°C

-55 to +125°C

°C

1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a

resistor R<1 kΩ is connected between gate and cathode

2) The device is not suitable for operation in the forward breakover mode.

Gate to Cathode - Ratings

With 1Ω resistor between gate and cathode

Symbol

Ratings

BTX18 BTX18 BTX18 BTX18 BTX18

-100 -200 -300 -400 -500

VFGM

Forward Peak Voltage

Max : 10 V

V

VRGM

Reverse Peak Voltage

Max : 5 V

V

IFGM

Forward Peak Current

Max : 0.2

A

PG(AV)

Average Power Dissipation (averaged over

any 20 ms period)

Max : 0.05

W

PGM

Peak Power Dissipation

Max : 0.5

W

Temperatures

Symbol

Ratings

Rth j-c

Rth j-a

Zth j-c

From Junction to Case

From Junction to Ambient

Transient Thermal Resistance (t=10 ms)

BTX18 BTX18 BTX18 BTX18 BTX18

-100 -200 -300 -400 -500

10

°C/W

200

°C/W

2.5

°C/W

Anode to Cathode - Characteristics

Symbol

Ratings

VT

On State Voltage

IT=1.0 A, Tj=25°C

BTX18 BTX18 BTX18 BTX18 BTX18

-100 -200 -300 -400 -500

<

1.5 1.5 1.5 1.5 1.5 V1)

COMSET SEMICONDUCTORS

2/4

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