Philips Semiconductors
Voltage regulator diodes
Product specification
BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF
continuous forward current
IZSM
non-repetitive peak reverse current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Tamb = 25 °C; note 1
Note
1. Device mounted on a FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX399-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
BZX399-C1V8
BZX399-C2V0
BZX399-C2V2
BZX399-C2V4
BZX399-C2V7
BZX399-C3V0
BZX399-C3V3
BZX399-C3V6
BZX399-C3V9
BZX399-C4V3
BZX399-C4V7
BZX399-C5V1
BZX399-C5V6
BZX399-C6V2
BZX399-C6V8
BZX399-C7V5
BZX399-C8V2
BZX399-C9V1
BZX399-C10
BZX399-C11
BZX399-C12
BZX399-C13
BZX399-C15 to 43
CONDITIONS
IF = 10 mA; see Fig.5
IF = 100 mA; see Fig.5
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 3 V
VR = 3 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 7 V
VR = 8 V
VR = 9 V
VR = 10 V
VR = 0.7VZnom
1999 Jun 04
3
MIN.
MAX.
−
250
see Tables 1 and 2
UNIT
mA
−
300
mW
−65
+150
°C
−
150
°C
MAX.
0.9
1.0
2
1
0.5
0.2
0.05
0.02
2
1
0.5
0.1
2
1
1
0.1
0.01
0.1
0.2
0.1
0.1
0.05
0.05
0.05
0.01
UNIT
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA