WF512K64-120G4WC5 データシートの表示（PDF） - White Electronic Designs => Micro Semi

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WF512K64-120G4WC5

512Kx64 5V FLASH MODULE

White Electronic Designs => Micro Semi 

WF512K64-XG4WX5

ABSOLUTE MAXIMUM RATINGS

Parameter

Operating Temperature

Supply Voltage Range (VCC)

Signal voltage range (any pin except A9) (2)

Storage Temperature Range

Lead Temperature (soldering, 10 seconds)

Data Retention (Mil Temp)

Endurance (write/erase cycles) (Mil Temp)

A9 Voltage for sector protect (VID) (3)

Unit

-55 to +125

°C

-2.0 to +7.0

V

-2.0 to +7.0

V

-65 to +150

°C

+300

°C

20 years

100,000 cycles min.

-2.0 to +14.0

V

NOTES:

1. Stresses above the absolute maximum rating may cause permanent damage

to the device. Extended operation at the maximum levels may degrade perfor-

mance and affect reliability.

2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,

inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC

voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs

may overshoot to Vcc + 2.0 V for periods of up to 20ns.

3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9

may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage

on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns.

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

Conditions

OE capacitance

COE VIN = 0 V, f = 1.0 MHz

WE capacitance

CWE VIN = 0 V, f = 1.0 MHz

CS capacitance

CCS VIN = 0 V, f = 1.0 MHz

Data I/O capacitance

CI/O VI/O = 0 V, f = 1.0 MHz

Address input capacitance CAD VIN = 0 V, f = 1.0 MHz

This parameter is guaranteed by design but not tested.

Max Unit

100 pF

20 pF

20 pF

20 pF

100 pF

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol Min

Max

Unit

Supply Voltage

VCC

4.5

5.5

V

Input High Voltage

VIH

2.0

VCC + 0.5

V

Input Low Voltage

VIL

-0.5

+0.8

V

Operating Temp. (Mil.)

TA

-55

+125

°C

Operating Temp. (Ind.)

TA

-40

+85

°C

A9 Voltage for Sector Protect

VID

11.5

12.5

V

DC CHARACTERISTICS - CMOS COMPATIBLE

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

µA

Output Leakage Current

ILOx32 VCC = 5.5, VIN = GND to VCC

10

µA

VCC Active Current for Read (1)

ICC1

CS = VIL, OE = VIH, f = 5MHz

380

mA

VCC Active Current for Program or Erase (2)

ICC2

CS = VIL, OE = VIH

480

mA

VCC Standby Current

VCC Static Current

Output Low Voltage

ICC4

VCC = 5.5, CS = VIH, f = 5MHz

ICC3

VCC = 5.5, CS = VIH

VOL

IOL = 8.0 mA, VCC = 4.5

13

mA

1.2

mA

0.45

V

Output High Voltage

VOH1

IOH = -2.5 mA, VCC = 4.5

0.85 X VCC

V

Low VCC Lock-Out Voltage

VLKO

3.2

4.2

V

NOTES:

1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/

MHz, with OE at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520

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