CHM2378A(2006) データシートの表示（PDF） - United Monolithic Semiconductors

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CHM2378A
(Rev.:2006)

W-band Dual Channel Mixer

United Monolithic Semiconductors 

CHM2378a

Typical Assembly Configuration

+V

C1

R_bias

120pF

IF1

W-band Dual Channel Mixer

µ-strip line

L_lo

µ-strip line

L_rf1

µ-strip line

L_rf2

R_bias

C2

+V

120pF

IF2

This drawing shows an example of assembly configuration. The bias and IF inter-

connections are according to the example given in the previous chapter.

For the RF pads the equivalent wire bonding inductance (diameter=25µm) have

to be according to the following recommendation.

Port

LO (2)

RF1 (10)

RF2 (13)

Equivalent inductance

(nH)

L_lo= 0.26

L_rf1 = 0.26

L_rf2 = 0.26

Approximative wire

length (mm)

0.33

0.33

0.33

For a micro-strip configuration a hole in the substrate is recommended for chip

assembly.

As the connections at 77GHz (between MMIC and MMIC or between MMIC and

external substrate) are critical, the transition matching network is split into two

parts: one on MMIC and one on the external substrate. This choice allows doing

both kinds of connections.

Ref. DSCHM2378a6354 - 20 Dec 06

6/8

Specifications subject to change without notice

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