CMF20120D(2011) データシートの表示（PDF） - Cree, Inc

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CMF20120D
(Rev.:2011)

Silicon Carbide Power MOSFET

Cree, Inc 

CMF20120D-Silicon Carbide Power MOSFET

Z-FET™ MOSFET

N-Channel Enhancement Mode

Features

Package

VDS

= 1200 V

RDS(on)

= 80 mΩ

ID(MAX)@TC=25°C = 33 A

• Industry Leading RDS(on)

• High Speed Switching

• Low Capacitances

• Easy to Parallel

• Simple to Drive

• Pb-Free Lead Plating, ROHS Compliant,

Halogen Free

Benefits

TO-247-3

DD

GG

SS

• Higher System Efficiency

• Reduced Cooling Requirements

• Avalanche Ruggedness

• Increased System Switching Frequency

Applications

Part Number

CMF20120D

Package

TO-247-3

• Solar Inverters

• High Voltage DC/DC Converters

• Motor Drives

Maximum Ratings

Symbol

Parameter

Value Unit

Test Conditions

Note

ID

Continuous Drain Current

IDpulse Pulsed Drain Current

EAS

Single Pulse Avalanche Energy

EAR

Repetitive Avalanche Energy

33

VGS@20V, TC = 25˚C

A

17

VGS@20V, TC = 100˚C

78

A Pulse width tP limited by Tjmax

TC = 25˚C

2.2

J ID = 20A, VDD = 50 V,

L = 9.5 mH

1.5

J tAR limited by Tjmax

IAR

Repetitive Avalanche Current

20

A ID = 20A, VDD = 50 V, L = 3 mH

tAR limited by Tjmax

VGS Gate Source Voltage

-5/+25 V

Ptot

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

TL

Solder Temperature

Md

Mounting Torque

150

-55 to

+125

260

1

8.8

W TC=25˚C

˚C

˚C 1.6mm (0.063”) from case for 10s

Nm

lbf-in

M3 or 6-32 screw

2

CMF20120D Rev. -

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