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DGSK32-018CS データシートの表示(PDF) - IXYS CORPORATION

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DGSK32-018CS
IXYS
IXYS CORPORATION IXYS
DGSK32-018CS Datasheet PDF : 2 Pages
1 2
Gallium Arsenide Schottky Rectifier
Second generation
DGS 15-018CS
DGSK 32-018CS
VRRM = 180 V
IDC = 24 A
CJunction = 21 pF
Type
DGS 15-018CS
Marking on product
15A180AS
Circuit
A
C
Single
DGSK 32-018CS DGSK 32-018CS
Common cathode
A
C
A
Package
TO-252 AA A
A
TAB
TO-263 AB A
A
TAB
A = Anode, TAB = Cathode
Diode
Symbol
VRRM/RSM
IFAV
IFAV
IFSM
Ptot
Conditions
TC = 25°C; DC
TC = 90°C; DC
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TC = 25°C
Maximum Ratings
180
V
24
A
15
A
80
A
34
W
Symbol
Conditions
Characteristic Values
min. typ. max.
VF
IF = 7.5 A; TVJ = 25°C
IF = 7.5 A; TVJ = 125°C
IR
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 125°C
IRM
IF = 5 A;
-diF/dt = 150 A/µs;
trr
VR = 100 V; TVJ = 125°C
1.25 1.5 V
1.0
V
0.25 mA
0.25
mA
1.1
A
23
ns
CJ
VR = 100 V; TVJ = 125°C
RthJC
Data according to IEC 60747 and per diode unless otherwise specified
21
pF
4.4 K/W
Component
Symbol
Conditions
TVJ
Tstg
Maximum Ratings
-55...+175
°C
-55...+150
°C
Features
GaAs Schottky Diode with Enhanced
Barrier Height:
lowest operating forward voltage drop due
to additional injection of minority carriers
high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
Surface Mount Packages:
Incorporating Single and Dual Diode
Topologies
Industry Standard Package Outlines
Epoxy meets UL 94V-0
Applications
Switched Mode Power Supplies:
AC-DC converters
DC-DC converters
with:
high switching frequency
high efficiency
low EMI
for use e. g. in:
telecom
computer
automotive equipment
Symbol
Weight
Conditions
TO-252
TO-263
Characteristic Values
min. typ. max.
0.3
g
2
g
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
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