DRDN005W-7 データシートの表示（PDF） - Diodes Incorporated.
部品番号
コンポーネント説明
メーカー
DRDN005W-7 Datasheet PDF : 9 Pages
| |||
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
0.5
⎯
⎯
V VCC = 5V, IO = 100μA
⎯
⎯ 3.0 V VO = 0.3V, IO = 20mA
⎯
⎯ 0.3V V IO/Il = 50mA/2.5mA
⎯
⎯
28 mA VI = 5V
⎯
⎯
0.5 μA VCC = 50V, VI = 0V
47
⎯
⎯ ⎯ VO = 5V, IO = 50mA
⎯
200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.3
⎯
⎯
V VCC = -5V, IO = -100μA
⎯
⎯ -2.0 V VO = -0.3V, IO = -20mA
⎯
⎯ -0.3V V IO/Il = -50mA/-2.5mA
⎯
⎯ -7.2 mA VI = -5V
⎯
⎯ -0.5 μA VCC = -50V, VI = 0V
56
⎯
⎯ ⎯ VO = -5V, IO = -50mA
⎯
200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.5
⎯
⎯
V VCC = -5V, IO = -100μA
⎯
⎯ -3.0 V VO = -0.3V, IO = -20mA
⎯
⎯ -0.3V V IO/Il = -50mA/-2.5mA
⎯
⎯ -28 mA VI = -5V
⎯
⎯ -0.5 μA VCC = -50V, VI = 0V
47
⎯
⎯ ⎯ VO = -5V, IO = -50mA
⎯
200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage
Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
Min
75
0.62
⎯
⎯
⎯
IR
⎯
CT
⎯
trr
⎯
Max
⎯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
⎯
V
μA
μA
μA
nA
pF
ns
Test Condition
IR = 10μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
DS30573 Rev. 10 - 2
4 of 9
www.diodes.com
DRD (xxxx) W
© Diodes Incorporated
Share Link: 