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DS2224T データシートの表示(PDF) - Dallas Semiconductor -> Maxim Integrated

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DS2224T
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS2224T Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
DS2223/DS2224
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Time Slot
Read Data Valid
Release Time
Write 1 Low Time
Write 0 Low Time
Data Setup Time
Recovery Time
tSLOT
70
tRDV
tRELEASE
0
tLOW1
1
tLOW0
60
tSU
tREC
1
(–40°C to +85°C; VCC=1.4V ± 10%)
TYP
MAX
UNITS NOTES
µs
exactly 15
µs
15
45
µs
15
µs
µs
1
µs
8
µs
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Time Slot
Read Data Valid
Release Time
Write 1 Low Time
Write 0 Low Time
Data Setup Time
Recovery Time
tSLOT
60
tRDV
tRELEASE
0
tLOW1
1
tLOW0
60
tSU
tREC
1
(–40°C to +85°C; VCC=2.0V to 5.5V)
TYP
MAX
UNITS NOTES
µs
exactly 15
µs
15
45
µs
15
µs
µs
1
µs
8
µs
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pull–up voltage to system sypply.
3. Input pull–down resistance to ground.
4. @ VOL=0.4V
5. 36 nanocoulombs per 264 time slots @ 1.5V (see Figure 6).
6. See Figure 7 for typical values over temperature.
7. @ VOL=0.2V
8. Read data setup time refers to the time the host must pull the 1–Wire line low to read a bit. Data is guaran-
teed to be valid within 1 µs of this falling edge and will remain valid for 14 µs minimum (15 µs total from falling
edge on the 1–Wire line).
020698 10/10
10

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