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FB190SA10(2018) データシートの表示(PDF) - Vishay Semiconductors

部品番号
コンポーネント説明
メーカー
FB190SA10
(Rev.:2018)
Vishay
Vishay Semiconductors Vishay
FB190SA10 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
www.vishay.com
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VS-FB190SA10
Vishay Semiconductors
2.5 ID = 180A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20μs PULSE WIDTH
TJ = 150 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
20000
15000
10000
5000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
1000
TJ = 150° C
100
TJ = 25 ° C
10
V DS = 25V
20µs PULSE WIDTH
1
4
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20 ID = 180 A
15
VDS = 80V
VDS = 50V
VDS = 20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250 300 350 400
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
Revision: 02-Oct-2018
3
Document Number: 93459
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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