FDD6N50 データシートの表示（PDF） - Fairchild Semiconductor
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FDD6N50 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FDD6N50TM
FDD6N50TM_WS
FDU6N50TU
Top Mark
FDD6N50
FDD6N50S
FDU6N50
Package
DPAK
DPAK
IPAK
Packing Method
Tape and Reel
Tape and Reel
Tube
Reel Size
330 mm
330 mm
N/A
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
75 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 3 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 3 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250 V, ID = 6 A,
VGS = 10 V, RG = 25 Ω
VDS = 400 V, ID = 6 A,
VGS = 10 V
(Note 4)
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6 A,
dIF/dt =100 A/μs
Min.
500
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.76
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
275
1.7
Max Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0
V
0.9
Ω
--
S
940 pF
190
pF
13.5 pF
20
ns
120
ns
60
ns
80
ns
16.6 nC
--
nC
--
nC
6
A
24
A
1.4
V
--
ns
--
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2006 Fairchild Semiconductor Corporation
2
FDD6N50 / FDU6N50 Rev. C1
www.fairchildsemi.com
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