FDD6N50 データシートの表示（PDF） - Fairchild Semiconductor
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FDD6N50 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
♦ Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
102 Operation in This Area
is Limited by R DS(on)
101
100
10 us
100 us
1 ms
10 ms
DC
※ Notes :
10-1
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
♦ Notes :
1. VGS = 10 V
2. ID = 3 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
100
D = 0 .5
0.2
0.1
1 0 -1
0.05
0.02
0.01
※ N otes :
1 . Z θ JC(t) = 1 .4 ℃ /W M a x.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
single pulse
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
10 -1
100
101
t1, S quare W ave P ulse D uration [sec]
©2006 Fairchild Semiconductor Corporation
4
FDD6N50 / FDU6N50 Rev. C1
www.fairchildsemi.com
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