GFB70N03 データシートの表示（PDF） - General Semiconductor
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GFB70N03 Datasheet PDF : 5 Pages
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GFB70N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
30
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
1.0
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
—
Zero Gate Voltage Drain Current
On-State Drain Current(1)
IDSS
VDS = 30V, VGS = 0V
—
ID(on)
VDS ≥ 5V, VGS = 10V
70
Drain-Source On-State Resistance(1)
Forward Transconductance(1)
VGS = 10V, ID = 35A
—
RDS(on)
VGS = 4.5V, ID = 30A
—
gfs
VDS = 15V, ID = 35A
—
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, VGS=5V, ID=35A —
Qg
—
VDS = 15V, VGS = 10V
Qgs
ID = 35A
—
Qgd
—
Turn-On Delay Time
td(on)
—
Rise Time
tr
VDD = 15V, RL = 15Ω
—
Turn-Off Delay Time
td(off)
ID ≅ 1A, VGEN = 10V
—
Fall Time
tf
RG = 6Ω
—
Input Capacitance
Ciss
VGS = 0V
—
Output Capacitance
Coss
VDS = 15V
—
Reverse Transfer Capacitance
Crss
f = 1.0MHZ
—
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage(1)
IS
—
—
VSD
IS = 35A, VGS = 0V
—
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Typ
Max
—
—
—
3.0
—
±100
—
1
—
—
6
8
9
11
61
—
34
48
63
95
11
—
11
—
9
14
9
14
100
167
31
62
3400
—
618
—
300
—
—
35
0.9
1.3
Unit
V
V
nA
µA
A
mΩ
S
nC
ns
pF
A
V
Switching
Test Circuit
VIN
VGEN
RG
G
VDD
RD
D
VOUT
DUT
S
Switching
Waveforms
td(on)
ton
tr
td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH
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