GLT41316 データシートの表示（PDF） - G-Link Technology
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GLT41316 Datasheet PDF : 22 Pages
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G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Parameter
WE Lead Time Referenced to RAS
WE Lead Time Referenced to CAS
Data-In Setup Time
Data-In Hold Time
Data Hold Time Referenced to RAS
tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns
Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
l
tRWL
10 - 11 - 12 - 12 - ns
tCWL
10 - 11 - 12 - 12 - ns
tDS
0
-
0
-
0
-
0
- ns 11
tDH
7
-
7
-
8
-
8
- ns 11
tDHR
27 - 31 - 36 - 41 - ns 6
WE Setup Time
tWCS
0
-
0
-
0
-
0
- ns 5
RAS to WE Delay Time
tRWD
47 -
58 -
63 - 68 - ns 5
CAS to WE Delay Time
tCWD
24 -
29 -
30 - 30 - ns 5
Column Address to WE Delay Time
tAWD
29 - 36 - 38 - 40 - ns 5
CAS Setup Time( CAS before RAS
tCSR
Refresh)
5
-
5
-
5
-
5
- ns
CAS Hold Time( CAS before RAS
tCHR
10 - 10 - 10 - 10 - ns
Refresh)
RAS to CAS Precharge Time
tRPC
5
-
5
-
5
-
5
- ns
CAS Precharge Time(CBR Counter Test tCPT
Cycle)
20 - 20 - 20 - 20 - ns
Access Time from CAS Precharge
tCPA
- 18 - 21 - 23 - 25 ns 3
Fast Page mode Read/Write Cycle Time tPC
18 - 21 - 23 - 25 - ns
Fast Page mode Read Modify Write
Cycle Time
tPRWC
48
-
60
-
63
-
65
- ns
CAS Precharge Time(Fast Page mode) tCP
5.5 -
6
-
7
-
7
- ns
RAS Pulse Width(Fast Page mode)
tRASP
30 100k 35 100k 40 100K 45 100K ns
RAS Hold Time from CAS Precharge tRHCP
25
-
25
-
25
-
30
- ns
Access Time from OE
tOEA
- 10 - 11 - 12 - 12 ns
OE to Delay Time
tOED
Output Buffer Turn-off Delay Time from tOEZ
8
-
8
-
8
-
8
- ns
3
8
3
8
3
8
3
8 ns 7
OE
OE Hold Time
tOEH
6
-
6
-
7
-
7
- ns
WE Hold Time(Hidden Refresh Cycle) tWHR
Refresh Time(256cycles)
tREF
15 - 15 - 15 - 15 - ns
-
4
-
4
-
4
-
4 ms
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.
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