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GS815018AB データシートの表示(PDF) - Giga Semiconductor
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GS815018AB
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
Giga Semiconductor
GS815018AB Datasheet PDF : 25 Pages
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GS815018/36AB-357/333/300/250
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
I
IL
I
INM
Output Leakage Current
I
OL
Test Conditions
V
IN
= 0 to V
DDQ
V
IN
= 0 to V
DDQ
Output Disable,
V
OUT
= 0 to V
DDQ
Min.
–1 uA
–100 uA
–1 uA
Max Notes
1 uA
—
1 uA
—
1 uA
—
Operating Currents
Parameter
Symbol
x36
I
DD
Operating
Current
x18
I
DD
HSTL
Deselect
I
DD3
Current
-357
0°C –40°C
to
to
70°C +85°C
650 mA 660 mA
600 mA 610 mA
150 mA 160 mA
-333
0°C –40°C
to
to
70°C +85°C
600 mA 610 mA
550 mA 560 mA
150 mA 160 mA
-300
0°C –40°C
to
to
70°C +85°C
550 mA 560 mA
500 mA 510 mA
150 mA 160 mA
-250
0°C –40°C
to
to
70°C +85°C
500 mA 510 mA
450 mA 460 mA
150 mA 160 mA
Test Conditions
SS
≤
V
IL
Max.
tKHKH
≥
tKHKH Min.
All other inputs
V
IL
≥
V
IN
≥
V
IH
Device Deselected
All inputs
V
SS
+ 0.10 V
≥
V
IN
≥
V
DD
– 0.10 V
Rev: 1.05 10/2005
10/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
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