GT28F400B3B150 データシートの表示（PDF） - Intel

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GT28F400B3B150

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

Intel 

E

SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE

Table 13. DC Characteristics: VCCQ = 1.8V–2.2V

Sym

Parameter

Notes

VCC1:

2.7V–2.85V

VCC2:

2.7V–3.3V

Unit

Test Conditions

Typ Max

ILI

Input Load Current

1

ILO

Output Leakage Current

1

± 1.0

± 10

µA VCC = VCCMax

VCCQ = VCCQMax

VIN = VCCQ or GND

µA VCC = VCC Max

VCCQ = VCCQMax

VIN = VCCQ or GND

ICCS VCC Standby Current

1,7

20

50

µA CMOS INPUTS

VCC = VCC1 Max (2.7V–2.85V)

VCCQ = VCCQMax

CE# = RP# = VCCQ

150

250

µA CMOS INPUTS

VCC = VCC2 Max (2.7V–3.3V)

VCCQ = VCCQMax

CE# = RP# = VCCQ

ICCD VCC Deep Power-Down

1,7

1

10

µA CMOS INPUTS

Current

VCC = VCCMax (VCC1 or VCC2)

VCCQ = VCCQMax

VIN = VCCQ or GND

RP# = GND ± 0.2V

ICCR VCC Read Current

1,5,7

8

18

mA CMOS INPUTS

VCC = VCC1Max (2.7V–2.85V)

VCCQ = VCCQMax

OE# = VIH , CE# = VIL

f = 5 MHz, IOUT = 0 mA

Inputs = VIL or VIH

12

23

mA CMOS INPUTS

VCC = VCC2Max (2.7V–3.3V)

VCCQ = VCCQMax

OE# = VIH , CE# = VIL

f = 5 MHz, IOUT = 0 mA

Inputs = GND ± 0.2V or VCCQ

PRELIMINARY

35

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