H928SY データシートの表示（PDF） - Shantou Huashan Electronic Devices
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H928SY Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H928S
█ AUDIO POWER AMPLFIER APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………-750mW
VCBO——Collector-Base Voltage………………………………-30V
VCEO——Collector-Emitter Voltage……………………………-30V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-2A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(ON)
fT
Cob
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-30
V
IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage -30
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
5
V
IE=-1mA，IC=0
Collector Cut-off Current
-100 nA
VCB=-30V, IE=0
Emitter-Base Cut-off Current
-100 nA
VEB=-5V, IC=0
DC Current Gain
100
320
VCE=-2V, IC=-500mA
Collector- Emitter Saturation Voltage
-2 V IC=-1.5mA, IB=-30mA
Base-Emitter On Voltage
-1 V
VCE=-2V, IC=-500mA
Current Gain-Bandwidth Product
120
MHz VCE=-2V, IC=-500mA
Collector-Base Capacitance
48
pF VCB=-10V, IE=0，F=1MHz
█ hFE Classification
O
100—200
Y
160—320
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