H945 データシートの表示（PDF） - Shantou Huashan Electronic Devices
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H945 Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H945
█ APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………250mW
VCBO——Collector-Base Voltage………………………………60V
VCEO——Collector-Emitter Voltage……………………………50V
VEBO——Emitter-Base Voltage………………………………5V
IC——Collector Current……………………………………150mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
60
V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
50
V IC=100μA, IB=0
BVEBO Emitter-Base Breakdown Voltage
5
V IE=100μA，IC=0
HFE DC Current Gain
90
600
VCE=6V, IC=1mA
VCE(sat) Collector- Emitter Saturation Voltage
0.3 V IC=100mA, IB=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V IC=100mA, IB=10mA
ICBO Collector Cut-off Current
100 nA VCB=60V, IE=0
IEBO Emitter Cut-off Current
100 nA VEB=5V, IC=0
fT
Current Gain-Bandwidth Product
250
MHz VCE=6V, IC=10mA
Cob Output Capacitance
3.0
pF VCB=6V, IE=0，f=1MHz
NF Noise Figure
4.0
dB
VCE=6V,IC=0.5mA，f=1KHz，
Rs=500Ω
█ hFE Classification
R
90—180
Q
135—270
P
200—400
K
300—600
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