HFA3134IH96(1998) データシートの表示（PDF） - Intersil
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HFA3134IH96 Datasheet PDF : 5 Pages
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HFA3134, HFA3135
Absolute Maximum Ratings
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector
Current
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. 14mA
26mA
at
at
TJ
TJ
= 150oC
= 125oC
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300oC
(Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current spec-
ification.
Electrical Specifications TA = 25oC
PARAMETER
SYMBOL
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage (Note 4)
Collector-Cutoff-Current
Collector-Cutoff-Current
Emitter-Cutoff-Current (Note 5)
Collector-to-Collector Leakage
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICEO
ICBO
IEBO
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage (Note 5)
Q1 to Q2 Base-to-Emitter Voltage Match
(Note 5)
VCE(SAT)
VBE
∆VBE
Base-to-Emitter Voltage Drift
DC Forward-Current Transfer Ratio
hFE
(Note 5)
Q1 to Q2 Current Transfer Ratio Match
Early Voltage
∆hFE
VA
TEST CONDITIONS
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IC = 100µA, RB = 10kΩ
IE = 10µA, IC = 0
VCE = 6V, IB = 0
VCB = 8V, IE = 0
VEB = 1V, IC = 0
IC = 10mA, IB = 1mA
IC = 10mA, VCE = 2V
IC = 10mA, VCE = 2V
IC = 1mA, VCE = 2V
IC = 0.1mA, VCE = 2V
IC = 10mA
IC = 10mA, VCE = 2V
IC = 1mA, VCE = 2V
IC = 0.1mA, VCE = 2V
IC = 10mA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 0.1mA, VCE = 5V
1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
IC = 1mA, ∆VCE = 3V
TEST
LEVEL
(NOTE 3) MIN TYP MAX UNITS
A
12 21
-
V
A
4
9
-
V
A
11 17
-
V
B
-
6
-
V
A
-5
-
5
nA
A
-5
-
5
nA
B
-
1
-
pA
C
-
1
-
nA
A
-
95 250
mV
A
-
780 1000
mV
A
-
1.2
6
mV
A
-
1.0
6
mV
A
-
0.7
6
mV
C
-
-1.5
-
mV/oC
A
48 80 200
A
48 87 200
A
48 90 200
A
48 96 200
A
48 96 200
A
48 100 200
A
-
2
8
%
A
20 30
-
V
4-451
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