HFA3134 データシートの表示（PDF） - Intersil
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HFA3134 Datasheet PDF : 5 Pages
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HFA3134, HFA3135
Absolute Maximum Ratings
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . . 11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C
26mA at TJ =125°C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
(Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications TA = 25°C
PARAMETER
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage (Note 4)
Collector-Cutoff-Current
Collector-Cutoff-Current
Emitter-Cutoff-Current (Note 5)
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage (Note 5)
Q1 to Q2 Base to Emitter Voltage Match
(Note 5)
Base to Emitter Voltage Drift
DC Forward-Current Transfer Ratio
(Note 5)
Q1 to Q2 Current Transfer Ratio Match
Early Voltage
SYMBOL
TEST CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICEO
ICBO
IEBO
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IC = 100µA, RB = 10kΩ
IE = 10µA, IC = 0
VCE = 6V, IB = 0
VCB = 8V, IE = 0
VEB = 1V, IC = 0
VCE(SAT)
VBE
∆VBE
hFE
∆hFE
VA
IC = 10mA, IB = 1mA
IC = 10mA, VCE = 2V
IC = 10mA, VCE = 2V
IC = 1mA, VCE = 2V
IC = 0.1mA, VCE = 2V
IC = 10mA
IC = 10mA, VCE = 2V
IC = 1mA, VCE = 2V
IC = 0.1mA, VCE = 2V
IC = 10mA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 0.1mA, VCE = 5V
1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
IC = 1mA, ∆VCE = 3V
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
A
12 21
-
V
A
4
9
-
V
A
11
17
-
V
B
-
6
-
V
A
-5
-
5
nA
A
-5
-
5
nA
B
-
1
-
pA
C
-
1
-
nA
A
-
95 250
mV
A
-
780 1000
mV
A
-
1.2
6
mV
A
-
1.0
6
mV
A
-
0.7
6
mV
C
-
-1.5
-
mV/°C
A
48 80 200
A
48 87 200
A
48 90 200
A
48 96 200
A
48 96 200
A
48 100 200
A
-
2
8
%
A
20 30
-
V
2
FN4445.2
August 12, 2005
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