HL1326MF データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HL1326MF

InGaAsP Laser Diodes

Hitachi -> Renesas Electronics 

HL1326MF

Absolute Maximum Ratings (TC = 25°C)

Item

Symbol

Rated Value

Optical output power

PO

10 (Pulse) *1

5 (CW)

LD reverse voltage

PD reverse voltage

PD forward current

Operating temperature

VR (LD)

VR (PD)

IF (PD)

Topr

2

15

1

–40 to +85

Storage temperature

Tstg

–40 to +100

Note: 1. Maximum 50% duty cycle, maximum 1 µs pulse width

Unit

mW

mW

V

V

mA

°C

°C

Optical and Electrical Characteristics (TC = 25°C)

Item

Symbol Min Typ Max Unit

Test Conditions

Threshold current

Ith

— 8 20 mA

Optical output power

PO

Slope efficiency

ηs

Lasing wavelength

λc

Spectral width

σ

Beam divergence (parallel)

θ//

Beam divergence (perpendicular) θ⊥

Rise time

tr

5 — — mW

0.3 0.4 — mW/mA

0.15 0.25 —

1280 1310 1340 nm

—2

— nm

— 30 — deg.

— 40 — deg.

— — 0.5 ns

Kink free* 1

TC = 25°C

TC = 85°C

PO = 5 mW, RMS

PO = 5 mW, RMS

PO = 5 mW, FWHM

PO = 5 mW, FWHM

10 to 90%

Fall time

tf

— — 0.5 ns

90 to 10%

Monitor current

Is

100 — — µA

PO = 5 mW, VR(PD) = 5 V

PD dark current

I (DARK)

— — 350 nA

VR(PD) = 5 V

PD capacitance

Ct

— 15 20 pF

VR(PD) = 5 V, f = 1 MHz

Photosensitivity saturation voltage VR(S)

—— 2 V

Note: 1. Kink free up to 5mW is confirmed at the tempratures of 10 °C, 25°C and 85°C.

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