HS13002 データシートの表示（PDF） - Shantou Huashan Electronic Devices
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HS13002 Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HS13002
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………10W
VCBO——Collector-Base Voltage………………………………600V
VCEO——Collector-Emitter Voltage……………………………400V
VEBO——Emitter-Base Voltage………………………………9V
IC——Collector Current……………………………………0.25A
1―Base，B
2―Collector，C
3― Emitter，E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
600
Collector-Emitter Breakdown Voltage
400
Emitter-Base Breakdown Voltage
9
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
10
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
8
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=1mA， IC=0
100 μA VCB=500V, IE=0
100 μA VEB=9V, IC=0
40
VCE=10V, IC=20mA
0.6 V IC=100mA, IB=20mA
1.2 V IC=100mA, IB=20mA
MHz VCE=10V, IC=20mA
█ hFE Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40
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