OptiMOSTMPower-Transistor,60V
IPD025N06N
Diagram5:Typ.outputcharacteristics
360
10 V 7 V 6 V
320
280
240
5.5 V
200
160
5V
120
80
40
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
8
7
5V
5.5 V
6
5
4
6V
3
7V
2
10 V
1
0
3.0
0 40 80 120 160 200 240 280 320 360
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
360
320
280
240
200
160
120
80
175 °C
40
25 °C
0
0
2
4
6
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
200
150
100
50
0
8
0
20
gfs=f(ID);Tj=25°C
40
60
ID[A]
80
100
Final Data Sheet
8
Rev.2.5,2014-07-23