IRF3805LPBF データシートの表示（PDF） - International Rectifier

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IRF3805LPBF

HEXFET® Power MOSFET

International Rectifier 

IRF3805/S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

IDSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

55 ––– –––

––– 0.051 –––

––– 2.6 3.3

2.0 ––– 4.0

75 ––– –––

––– ––– 20

––– ––– 250

––– ––– 200

––– ––– -200

––– 190 290

––– 52 –––

––– 72 –––

––– 150 –––

––– 20 –––

––– 93 –––

––– 87 –––

––– 4.5 –––

––– 7.5 –––

––– 7960 –––

––– 1260 –––

––– 630 –––

––– 4400 –––

––– 980 –––

––– 1550 –––

V VGS = 0V, ID = 250µA

e V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 75A

V VDS = VGS, ID = 250µA

V VDS = 25V, ID = 75A

µA VDS = 55V, VGS = 0V

VDS = 55V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

ID = 75A

e nC VDS = 44V

VGS = 10V

VDD = 28V

ID = 75A

e ns RG = 2.6 Ω

VGS = 10V

Between lead,

D

nH 6mm (0.25in.)

G

from package

and center of die contact

S

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

f VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 75

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

––– ––– 890

A showing the

integral reverse

––– ––– 1.3

e p-n junction diode.

V TJ = 25°C, IS = 75A, VGS = 0V

––– 36

––– 47

54

71

e ns TJ = 25°C, IF = 75A, VDD = 28V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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