K2837B データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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K2837B Datasheet PDF : 7 Pages
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Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 90nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
K2837B
Silicon N-Channel MOSFET
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ
Junction Temperature
Tstg
Storage Temperature
TL
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
24
15.2
96
±30
1100
29
4.5
271
2.22
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
-
-
0.46
-
-
40
Rev.A Nov.2011
Copyright@WinSemi Microelectronics Co., Ltd., All right reserved.
Units
℃/W
℃/W
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