K4E660412D-TC/L データシートの表示（PDF） - Samsung

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K4E660412D-TC/L

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Samsung 

K4E660412D,K4E640412D

CMOS DRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Rating

Units

Voltage on any pin relative to VSS

VIN,VOUT

-0.5 to +4.6

V

Voltage on VCC supply relative to VSS

VCC

-0.5 to +4.6

V

Storage Temperature

Tstg

-55 to +150

°C

Power Dissipation

PD

1

W

Short Circuit Output Current

IOS Address

50

mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)

Parameter

Symbol

Min

Typ

Max

Supply Voltage

VCC

3.0

3.3

3.6

Ground

VSS

0

0

0

Input High Voltage

VIH

Input Low Voltage

VIL

2.0

-0.3*2

-

Vcc+0.3*1

-

0.8

*1 : Vcc+1.3V at pulse width≤15ns which is measured at VCC

*2 : -1.3 at pulse width≤15ns which is measured at VSS

Units

V

V

V

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,

all other pins not under test=0 Volt)

II(L)

-5

Max

5

Units

uA

Output Leakage Current

(Data out is disabled, 0V≤VOUT≤VCC)

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-2mA)

Output Low Voltage Level(IOL=2mA)

VOH

2.4

VOL

-

-

V

0.4

V

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