KSH13003 データシートの表示（PDF） - Shantou Huashan Electronic Devices
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KSH13003 Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13003
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
High Speed Switching. Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
T stg ——Storage Temperature………………………… -65~150℃
Tj ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………40W
VCBO——Collector-Base Voltage………………………………700V
VCEO——Collector-Emitter Voltage……………………………400V
VEBO —— Emitter - Base Voltage………………………………9 V
I——CCollector Current……………………………………1.5A
IB——Base Curren………………………………………………0.75A
1―Base， B
２―Collector，C
３― Emitter，E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCEO
IEBO
HFE1
HFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
fT
tON
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
tSTG
tF
Storage Time
Fall Time
Min
４００
１０
５
４
Typ
Max Unit
Test Conditions
Ｖ IC=5mA, IB=0
１０ μＡ VEB=9V, IC=0
４０ VCE=5V, IC=0.5A
VCE=2V, IC=1A
０．５ Ｖ IC=0.5A, IB=0.1A
１ Ｖ IC=1A, IB=0.25A
３ Ｖ IC=1.5A, IB=0.5A
１ Ｖ IC=0.5A, IB=0.1A
１．２
１．１
Ｖ IC=1A, IB=0.25A
ＭＨｚ VCE=10V,IC=0.1A
μs VCC=125V, IC=1A,
４．０ μs IB1=0.2A,IB2=-0.2A
０．７ μs RL=125Ω
█ hFE Classification
H1
H2
H3
H4
H5
10-16
14-21
19-26
24-31
29-40
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