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KYZ25A05(2002) データシートの表示(PDF) - Diotec Semiconductor Germany

部品番号
コンポーネント説明
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KYZ25A05
(Rev.:2002)
Diotec
Diotec Semiconductor Germany  Diotec
KYZ25A05 Datasheet PDF : 2 Pages
1 2
Silicon Press-Fit-Diodes
KYZ 25A05 ... KYZ 25A6
KYZ 25K05 ... KYZ 25K6
Silizium-Einpreßdioden
Dimensions / Maße in mm
Nominal current – Nennstrom
25 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…600 V
Metal press-fit case with glass seal
Metall-Einpreßgehäuse mit Glasdurchführung
Weight approx. – Gewicht ca.
10 g
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
VRRM [V]
KYZ 25A05 KYZ 25K05
50
KYZ 25A1
KYZ 25K1
100
KYZ 25A2
KYZ 25K2
200
KYZ 25A3
KYZ 25K3
300
KYZ 25A4
KYZ 25K4
400
KYZ 25A6
KYZ 25K6
600
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing – Grenzlastintegral, t <10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Maximum pressure – Maximaler Einpreßdruck
IFAV
25 A
IFRM
80 A 1)
IFSM 270 / 300 A
i2t
375 A2s
Tj – 50...+175 /C
TS – 50...+175 /C
7 kN
1) Max. case temperature TC = 150/C – Max. Gehäusetemperatur TC = 150
86
28.02.2002

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