KYZ25A05 データシートの表示（PDF） - Diotec Semiconductor Germany

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KYZ25A05

Silicon-Press-Fit-Diodes – High Temperature Diodes

Diotec Semiconductor Germany  

Characteristics

Forward Voltage

Durchlass-Spannung

Leakage Current

Sperrstrom

Thermal Resistance Junction – Case

Wärmewiderstand Sperrschicht – Gehäuse

KYZ25A05 ... KYZ25A6, KYZ25K05 ... KYZ25K6

Tj = 25°C IF = 25 A

VF

Kennwerte

< 1.1 V

Tj = 25°C VR = VRRM

IR

< 100 µA

RthC

< 1 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TC 50

100

150 [°C]

Rated forward current versus case temperature

Zul. Richtstrom in Abh. von der Gehäusetemp.

103

[A]

102

Tj = 125°C

10

Tj = 25°C

1

IF

10-1

270a-(25a-1,1v)

0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

103

[A]

102

îF

10

1

10

102

[n] 103

Peak forward surge current versus number of cycles at 50 Hz

Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz

© Diotec Semiconductor AG

http://www.diotec.com/

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