LH530800AN-Y データシートの表示（PDF） - Sharp Electronics

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LH530800AN-Y

CMOS 1M (128K × 8) 3 V-Drive MROM

Sharp Electronics 

CMOS 1M Mask-Programmable ROM

LH530800A-Y

Input voltage

VIN

-0.3 to VCC +0.3

V

Output voltage

VOUT

-0.3 to VCC +0.3

V

Operating temperature

Topr

0 to +70

°C

Storage temperature

Tstg

-65 to +150

°C

RECOMMENDED OPERATING CONDI-

TIONS (TA = 0 to +70°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply voltage

VCC

2.6

5.5

V

DC CHARACTERISTICS (VCC = 2.6 V to 5.5 V, TA = 0 to +70°C)

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

Input ‘Low’ voltage

VIL

Input ‘High’ voltage

VIH

Output ‘Low’ voltage

VOL

Output ‘High’ voltage

VOH

Input leakage current

| ILI |

Output leakage

current

| ILO |

Operating current

ICC1

ICC2

ICC3

Standby current

ISB1

ISB2

Input capacitance

CIN

Output capacitance

COUT

NOTES:

1. CE/OE = VIH, OE = VIL

2. 4.5 V ≤ VCC ≤ 5.5 V, outputs open

3. 3.4 V < VCC < 4.5 V, outputs open

4. 2.6 V ≤ VCC ≤ 3.4 V, outputs open

IOL = 400 µA

IOH = -100 µA

VIN = 0 V to VCC

VOUT = 0 V to VCC

tRC = 150 ns

tRC = 500 ns

tRC = 500 ns

CE = VIH

CE = VCC - 0.2 V

f = 1 MHz

TA = 25°C

-0.3

0.8 × VCC

0.8 × VCC

0.4

VCC + 0.3

0.4

10

10

35

18

12

2

100

10

10

AC CHARACTERISTICS (TA = 0 to +70°C)

PARAMETER

SYMBOL

2.6 V ≤ VCC < 4.5 V

MIN.

MAX.

Read cycle time

tRC

500

Address access time

tAA

500

Chip enable access time

tACE

500

Output enable delay time

tOE

200

Output hold time

tOH

10

CE to output in High-Z

tCHZ

150

OE to output in High-Z

tOHZ

150

NOTE:

1. This is the time required for the output to become high-imped-

ance.

4.5 V ≤ VCC ≤ 5.5 V

MIN.

MAX.

150

150

150

80

10

80

80

UNIT

ns

ns

ns

ns

ns

ns

ns

UNIT

V

V

V

V

µA

µA

mA

mA

mA

mA

µA

pF

pF

NOTE

1

2

3

4

NOTE

1

3

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