MAX6495(2005) データシートの表示（PDF） - Maxim Integrated

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MAX6495
(Rev.:2005)

72V, Overvoltage-Protection Switches/Limiter Controllers with an External MOSFET

Maxim Integrated 

72V, Overvoltage-Protection Switches/Limiter

Controllers with an External MOSFET

ELECTRICAL CHARACTERISTICS (continued)

(VIN = 14V, CGATE = 6nF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX UNITS

OVSET to GATE Propagation

Delay

tOV SET rising from VTH - 100mV to VTH + 100mV

0.6

µs

UVSET to GATE, POKSET to

POK Propagation Delay

GATE Output High Voltage

GATE Output Low Voltage

GATE Charge-Pump Current

GATE to OUTFB Clamp

Voltage

IN to GATEP Output Low

Voltage

IN to GATEP Clamp Voltage

SHDN, CLEAR Logic-High

Input Voltage

SHDN, CLEAR Logic-Low

Input Voltage

SHDN Input Pulse Width

CLEAR Input Pulse Width

SHDN, CLEAR Input

Pulldown Current

Thermal Shutdown

Thermal-Shutdown

Hysteresis

POKSET, UVSET falling from VTH + 100mV to

20

µs

VTH - 100mV

VOH

VOUTFB = VIN = 5.5V, RGATE to IN = 1MΩ

VOUTFB = VIN, VIN ≥ 14V, RGATE to IN = 1MΩ

VIN + 3.4 VIN + 3.8 VIN + 4.2

VIN + 8 VIN + 10 VIN + 11

V

GATE sinking 20mA, OUTFB = GND

VOL

VIN = 5.5V, GATE sinking 1mA, OUTFB = GND

1

V

0.9

IGATE GATE = GND

100

µA

VCLMP

12

18

V

IGATEP_SINK = 75µA, IGATEP_SOURCE = 1µA

VIN = 24V, IGATEP_SOURCE = 10µA

VIH

VIL

SHDN is Internally pulled down to GND

(Note 3)

7.5

11.7

V

12

18

V

1.4

V

0.4

7

µs

0.5

µs

0.6

1.0

1.4

µA

+160

°C

20

°C

POKSET to POK Delay

(MAX6497/MAX6498)

POK Output Low Voltage

(MAX6497/MAX6498)

POK Leakage Current

(MAX6497/MAX6498)

VOL

VIN ≥ 14V, POKSET = GND, ISINK = 3.2mA

VIN ≥ 2.8V, POKSET = GND, ISINK = 100µA

VPOKSET = 14V

35

µs

0.4

V

0.4

100

nA

Note 1: Specifications to -40°C are guaranteed by design and not production tested.

Note 2: The MAX6495–MAX6499 power up with the external MOSFET in off mode (VGATE = GND). The external MOSFET turns on

tSTART after all input conditions are valid.

Note 3: For accurate overtemperature-shutdown performance, place the device in close thermal contact with the external MOSFET.

_______________________________________________________________________________________ 3

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