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MAX6495 データシートの表示(PDF) - Maxim Integrated

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MAX6495 Datasheet PDF : 16 Pages
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MAX6495–MAX6499
Detailed Description
Overvoltage Monitoring
When operating in overvoltage mode, the MAX6495–
MAX6499 feedback path (Figure 1) consists of IN,
OVSET’s internal comparator, the internal gate charge
pump, and the external nMOSFET, resulting in a switch-
on/off function. When the programmed overvoltage
threshold is tripped, the internal fast comparator turns off
the external MOSFET, clamping GATE to OUTFB within
0.5μs and disconnecting the power source from the load.
When IN decreases below the adjusted overvoltage
threshold, the MAX6495–MAX6499 slowly enhance GATE
above OUTFB, reconnecting the load to the power source.
Overvoltage Limiter
(MAX6495/MAX6496/MAX6499)
When operating in overvoltage-limiter mode, the
MAX6495/MAX6496/MAX6499 feedback path (Figure 2)
consists of OUTFB, OVSET’s internal comparator, the
internal gate charge pump, and the external n-channel
MOSFET, resulting in the external MOSFET operating as
a voltage regulator.
During normal operation, GATE is enhanced 10V above
OUTFB. The external MOSFET source voltage is monitored
through a resistive divider between OUTFB and OVSET.
When OUTFB rises above the adjusted overvoltage
threshold, an internal comparator sinks the charge-
pump current, discharging the external GATE, regulating
OUTFB at the OVSET overvoltage threshold. OUTFB
remains active during the overvoltage transients and the
MOSFET continues to conduct during the overvoltage
event, operating in switched-linear mode.
As the transient begins decreasing, OUTFB fall time
will depend on the MOSFET’s GATE charge, the internal
charge-pump current, the output load, and the tank
capacitor at OUTFB.
For fast-rising transients and very large-sized MOSFETs,
add an additional bypass capacitor from GATE to GND
to reduce the effect of the fast-rising voltages at IN.
The external capacitor acts as a voltage-divider working
against the MOSFET’s drain-to-gate capacitance. For a
6000pF gate-to-source capacitance, a 0.1μF capacitor at
GATE will reduce the impact of the fast-rising VIN input.
Caution must be exercised when operating the MAX6495/
MAX6496/MAX6499 in voltage-limiting mode for long
durations. If the VIN is a DC voltage greater than the
MOSFET’s maximum gate voltage, the MOSFET dissi-
pates power continuously. To prevent damage to the exter-
nal MOSFET, proper heatsinking should be implemented.
72V, Overvoltage-Protection
Switches/Limiter Controllers
with an External MOSFET
VIN
VOUT
GATE
IN
OUTFB
R1
MAX6495–
MAX6499
OVSET
R2
GND
Figure 1. Overvoltage Threshold (MAX6495–MAX6499)
VIN
GATE
IN
OUTFB
MAX6495
MAX6496
MAX6499
OVSET
GND
VOUT
COUT
R1
R2
Figure 2. Overvoltage-Limiter Protection Switch Configuration
GATE Voltage
The MAX6495–MAX6499 use a high-efficiency charge
pump to generate the GATE voltage. Upon VIN exceed-
ing the 5V (typ) UVLO threshold, GATE enhances 10V
above VIN (for VIN ≥ 14V) with a 100μA pullup current. An
overvoltage condition occurs when the voltage at OVSET
goes above its VTH+ threshold. When the threshold is
crossed, GATE falls to OUTFB within 0.5μs with a 100mA
pulldown current. The MAX6495–MAX6499 include an
internal clamp to OUTFB that ensures GATE is limited to
18V (max) above OUTFB to prevent gate-to-source dam-
age of the external MOSFET.
www.maximintegrated.com
Maxim Integrated 8

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