MAX6880 データシートの表示（PDF） - Maxim Integrated
部品番号
コンポーネント説明
メーカー
MAX6880 Datasheet PDF : 19 Pages
| |||
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
Pin Description (continued)
PIN
MAX6880 MAX6881 MAX6882 MAX6883
14
—
10
—
16
9
—
—
NAME
FUNCTION
PG/RST
OUT3
Power-Good Output, Open-Drain. PG_RST asserts high tTIMEOUT
after all OUT_ voltages exceed the VTH_PG thresholds.
Channel 3 Monitored Output Voltage. Connect OUT3 to the source
of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
17
10
—
—
GATE3 boosts GATE3 to VIN3 + 5V to fully enhance the external n-channel
FET when power-up is complete.
Channel 2 Monitored Output Voltage. Connect OUT2 to the source
18
11
11
11
OUT2 of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
19
12
12
12
GATE2 boosts GATE2 to VIN2 + 5V to fully enhance the external n-channel
FET when power-up is complete.
Channel 1 Monitored Output Voltage. Connect OUT1 to the source
20
13
13
13
OUT1 of an n-channel FET. A fault condition activates a 100Ω pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
21
14
14
14
GATE1 boosts GATE1 to VIN1 + 5V to fully enhance the external n-channel
FET when power-up is complete.
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the
22
15
—
—
IN3 internal undervoltage lockout (VABP = 2.7V) to enable the
sequencing functionality. Each IN_ input is simultaneously
23
16
15
15
IN2 monitored by SET_ inputs to ensure all supplies have stabilized
before power-up is enabled. If IN_ is connected to ground or left
unconnected and SET_ is above 0.5V, then no sequencing control
24
1
16
16
IN1 is performed on that channel. Each IN_ is internally pulled down by
a 100kΩ resistor.
EP
EP
EP
EP
EP Exposed Paddle. Connect exposed paddle to ground.
10 ______________________________________________________________________________________
Share Link: 