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89C1632 データシートの表示(PDF) - MAXWELL TECHNOLOGIES

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89C1632
Maxwell
MAXWELL TECHNOLOGIES Maxwell
89C1632 Datasheet PDF : 13 Pages
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16 Megabit (512K x 32-Bit) MCM SRAM
89C1632
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.
4. At any given temperature and voltage conditions, tHZ (max) is less than tLZ (min) both for a given device and from device to
device.
5. Transition is measured +200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS = VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write
cycle.
FIGURE 4. TIMING WAVEFORM OF WRITE CYCLE (1) (OE CLOCK)
FIGURE 5. TIMING WAVEFORM OF WRITE CYCLE (2) (OE LOW FIIXED)
1000558
12.20.01 Rev 1
All data sheets are subject to change without notice 8
©2001 Maxwell Technologies.
All rights reserved.

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