MBM29LV008BA-12 データシートの表示（PDF） - Fujitsu

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MBM29LV008BA-12

FLASH MEMORY CMOS 8M (1M × 8) BIT

Fujitsu 

MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12

s DC CHARACTERISTICS

Parameter

Symbol

Parameter Description

Test Conditions

Min.

Max. Unit

ILI

Input Leakage Current

ILO

Output Leakage Current

VIN = VSS to VCC, VCC = VCC Max.

VOUT = VSS to VCC, VCC = VCC Max.

–1.0

–1.0

+1.0

µA

+1.0

µA

ILIT

A9, OE, RESET Inputs Leakage VCC = VCC Max.

Current

A9, OE, RESET = 12.5 V

—

35

µA

CE = VIL, OE = VIH, f=10 MHz

—

22

mA

ICC1

VCC Active Current (Note 1)

CE = VIL, OE = VIH, f=5 MHz

—

12

mA

ICC2

VCC Active Current (Note 2)

CE = VIL, OE = VIH

—

35

mA

ICC3

VCC Current (Standby)

VCC = VCC Max., CE = VCC ± 0.3 V,

RESET = VCC ± 0.3 V

—

5

µA

ICC4

VCC Current (Standby, Reset)

VCC = VCC Max.,

RESET = VSS ± 0.3 V

—

5

µA

ICC5

VCC Current

(Automatic Sleep Mode) (Note 3)

VCC = VCC Max., CE = VSS ± 0.3 V,

RESET = VCC ± 0.3 V

VIN = VCC ± 0.3 V or VSS ± 0.3 V

—

5

µA

VIL

Input Low Level

—

–0.5

0.6

V

VIH

Input High Level

—

2.0 VCC + 0.3 V

Voltage for Autoselect, Sector

Protection,and Temporary Sector

VID

Unprotection

—

(A9, OE, RESET)

(Note 4)

11.5

12.5

V

VOL

VOH1

VOH2

Output Low Voltage Level

Output High Voltage Level

IOL = 4.0 mA, VCC = VCC Min.

—

0.45

V

IOH = –2.0 mA, VCC = VCC Min.

2.4

—

V

IOH = –100 µA

VCC – 0.4

—

V

VLKO

Low VCC Lock-Out Voltage

—

2.3

2.5

V

Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.

4. (VID – VCC) do not exceed 9 V.

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