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MC-458CA727EFA-A75 データシートの表示(PDF) - Elpida Memory, Inc

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MC-458CA727EFA-A75 Datasheet PDF : 16 Pages
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CA727
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module
on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 72 bits organization (ECC Type)
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-458CA727EFA-A75
MC-458CA727PFA-A75
CL = 3
CL = 2
CL = 3
CL = 2
133 MHz
100 MHz
133 MHz
100 MHz
5.4 ns
6.0 ns
5.4 ns
6.0 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ± 10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles /64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0060N20 (Ver. 2.0)
Date Published March 2001 CP (K)
Printed in Japan
This product became EOL in September, 2002.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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