MC-458CA727EFA-A75 データシートの表示（PDF） - Elpida Memory, Inc

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MC-458CA727EFA-A75

8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

MC-458CA727

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Voltage on power supply pin relative to GND

Voltage on input pin relative to GND

Short circuit output current

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

VCC

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

5

W

0 to 70

°C

–55 to +125

°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Symbol

Supply voltage

VCC

High level input voltage

VIH

Low level input voltage

VIL

Operating ambient temperature

TA

Condition

MIN.

3.0

2.0

−0.3

0

TYP.

MAX.

Unit

3.3

3.6

V

VCC + 0.3

V

+0.8

V

70

°C

Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Symbol

Test condition

MIN. TYP. MAX. Unit

Input capacitance

Data input/output capacitance

CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 25

CI2 CLK0, CLK2

24

CI3 CKE0

24

CI4 /CS0, /CS2

12

CI5 DQMB0 - DQMB7

7

CI/O DQ0 - DQ63, CB0 - CB7

7

44

pF

40

40

24

16

13

pF

Data Sheet E0060N20

5

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