MC78T05ABT データシートの表示（PDF） - ON Semiconductor

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MC78T05ABT

3.0 A Positive Voltage Regulators

ON Semiconductor 

MC78T00 Series

MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)

Rating

Symbol

Value

Unit

Input Voltage (5.0 V − 12 V)

Input Voltage (15 V)

VI

35

Vdc

40

Power Dissipation and Thermal Characteristics

Plastic Package (Note 1)

TA = +25°C

Thermal Resistance, Junction−to−Air

TC = +25°C

Thermal Resistance, Junction−to−Case

PD

RqJA

PD

RqJC

Internally Limited

65

Internally Limited

2.5

°C/W

°C/W

Storage Junction Temperature

Operating Junction Temperature Range

(MC78T00C, AC)

Tstg

+150

°C

TJ

0 to +125

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W.

ELECTRICAL CHARACTERISTICS (Vin = 10 V, IO = 3.0 A, 0°C ≤ TJ ≤ 125°C, PO ≤ Pmax (Note 2), unless otherwise noted.)

MC78T05AC

MC78T05C

Characteristics

Symbol Min

Typ

Max

Min

Typ

Max

Unit

Output Voltage

(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)

(5.0 mA ≤ IO ≤ 3.0 A;

5.0 mA ≤ IO ≤ 2.0 A, 7.3 Vdc ≤ Vin ≤ 20 Vdc)

VO

Vdc

4.9

5.0

5.1

4.8

5.0

5.2

4.8

5.0

5.2

4.75

5.0

5.25

Line Regulation (Note 3)

Regline

−

3.0

25

−

3.0

25

mV

(7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C;

7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 1.0 A, TJ = +25°C;

8.0 Vdc ≤ Vin ≤ 12 Vdc, IO = 3.0 A, TJ = +25°C;

7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A)

Load Regulation (Note 3)

(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)

(5.0 mA ≤ IO ≤ 3.0 A)

Regload

mV

−

10

30

−

10

30

−

15

80

−

15

80

Thermal Regulation

(Pulse = 10 ms, P = 20 W, TA = +25°C)

Regtherm

−

0.001 0.01

−

0.002 0.03 %VO/W

Quiescent Current

(5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C)

(5.0 mA ≤ IO ≤ 3.0 A)

IB

mA

−

3.5

5.0

−

3.5

5.0

−

4.0

6.0

−

4.0

6.0

Quiescent Current Change

DIB

(7.2 Vdc ≤ Vin ≤ 35 Vdc, IO = 5.0 mA, TJ = +25°C;

5.0 mA ≤ IO ≤ 3.0 A, TJ = +25°C;

7.5 Vdc ≤ Vin ≤ 20 Vdc, IO = 1.0 A)

−

0.3

1.0

−

0.3

1.0

mA

Ripple Rejection

(8.0 Vdc ≤ Vin ≤ 18 Vdc, f = 120 Hz,

IO = 2.0 A, TJ = 25°C)

RR

62

75

−

62

75

−

dB

Dropout Voltage (IO = 3.0 A, TJ = +25°C)

Vin−VO

−

2.2

2.5

−

2.2

2.5

Vdc

Output Noise Voltage

(10 Hz ≤ f ≤ 100 kHz, TJ = +25°C)

Vn

−

10

−

−

10

−

mV/VO

Output Resistance (f = 1.0 kHz)

RO

−

2.0

−

−

20

−

mW

2. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25 W.

3. Line and load regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account

separately.

Pulse testing with low duty cycle is used.

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