MDE6IC7120GNR1 データシートの表示（PDF） - Freescale Semiconductor

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MDE6IC7120GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA,

VG2B = 2.3 Vdc, 728 - 768 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

120

—

W

IMD Symmetry @ 90 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

MHz

—

3

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

Quiescent Current Accuracy over Temperature (2)

with 4.3 kΩ Gate Feed Resistors ( - 30 to 85°C)

VBWres

—

65

—

Stage 1

Stage 2

ΔIQT

—

0.012

—

—

0.031

—

MHz

%

Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg.

Gain Variation over Temperature

( - 30°C to +85°C)

GF

—

1.2

—

dB

ΔG

—

0.034

—

dB/°C

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.005

—

dBm/°C

1. Measurement made with device in a Symmetrical Doherty configuration.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or

AN1987.

MDE6IC7120NR1 MDE6IC7120GNR1

4

RF Device Data

Freescale Semiconductor

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