MMBD7000LT1 データシートの表示（PDF） - ON Semiconductor

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MMBD7000LT1

Dual Switching Diode

ON Semiconductor 

MMBD7000LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mAdc)

Reverse Voltage Leakage Current

(VR = 50 Vdc)

(VR = 100 Vdc)

(VR = 50 Vdc, 125°C)

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 100 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

V(BR)

IR

IR2

IR3

VF

trr

Capacitance (VR = 0 V)

C

Min

Max

Unit

100

−

Vdc

mAdc

−

1.0

−

3.0

−

100

Vdc

0.55

0.7

0.67

0.82

0.75

1.1

−

4.0

ns

−

1.5

pF

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 W OUTPUT

PULSE

GENERATOR

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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