MMBT2222LT1(2001) データシートの表示（PDF） - ON Semiconductor

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MMBT2222LT1
(Rev.:2001)

General Purpose Transistors NPN Silicon

ON Semiconductor 

MMBT2222LT1 MMBT2222ALT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)

only

(IC = 150 mAdc, VCE = 10 Vdc) (3)

(IC = 150 mAdc, VCE = 1.0 Vdc) (3)

(IC = 500 mAdc, VCE = 10 Vdc) (3)

MMBT2222A

MMBT2222

MMBT2222A

hFE

—

35

—

50

—

75

—

35

—

100

300

50

—

30

—

40

—

Collector–Emitter Saturation Voltage (3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

VCE(sat)

—

—

Vdc

0.4

0.3

(IC = 500 mAdc, IB = 50 mAdc)

Base–Emitter Saturation Voltage (3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

—

1.6

—

1.0

MMBT2222

VBE(sat)

—

Vdc

1.3

MMBT2222A

0.6

1.2

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

MMBT2222A

—

2.6

—

2.0

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