MMBT2222LT1 データシートの表示（PDF） - ON Semiconductor

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MMBT2222LT1

General Purpose Transistors NPN Silicon

ON Semiconductor 

MMBT2222LT1, MMBT2222ALT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

SMALL−SIGNAL CHARACTERISTICS

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

MMBT2222A

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

MMBT2222A

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

Rise Time

(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

Storage Time

Fall Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Symbol

Min

hoe

5.0

25

rb, Cc

−

NF

−

td

−

tr

−

ts

−

tf

−

Max

Unit

mmhos

35

200

ps

150

dB

4.0

10

ns

25

225

ns

60

+16 V

0

−2 V

SWITCHING TIME EQUIVALENT TEST CIRCUITS

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

< 2 ns

+30 V

200

CS* < 10 pF

+16 V

0

−14 V

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

< 20 ns

1k

1N914

+30 V

200

CS* < 10 pF

Scope rise time < 4 ns

−4 V

*Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

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