MMG05N60D データシートの表示（PDF） - Motorola => Freescale

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MMG05N60D

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Motorola => Freescale 

MMG05N60D

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

BVCES

600

680

—

0.7

Vdc

—

—

V/°C

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)

Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)

ICES

ICES

IGES

µAdc

—

0.1

5.0

—

5.0

50

—

10

100

mAdc

ON CHARACTERISTICS

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)

VCE(on)

Vdc

—

1.6

2.0

—

1.5

—

Gate Threshold Voltage

(VCE = VGE, IC = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGE(th)

Vdc

3.5

—

6.0

—

6.0

—

mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)

gfe

0.3

0.42

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 20 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

Cies

Coes

Cres

—

75

100

pF

—

11

20

—

1.6

5.0

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 0.3 Adc, TC = 25°C)

(IEC = 0.3 Adc, TC = 125°C)

(IEC = 0.1 Adc, TC = 25°C)

(IEC = 0.1 Adc, TC = 125°C)

Reverse Recovery Time @ TC = 25°C

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

Reverse Recovery Stored Charge

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

VFEC

trr

QRR

Vdc

—

5.0

6.0

—

5.2

—

—

2.3

3.0

—

2.3

—

ns

—

150

—

mC

—

35

—

SWITCHING CHARACTERISTICS (1)

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

(VCC = 300 Vdc, IC = 0.4 Adc,

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

TC = 25°C, dV/dt = 1000 V/ms)

Energy losses include “tail”

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

(VCC = 300 Vdc, IC = 0.4 Adc,

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

TC = 125°C, dV/dt = 1000 V/ms)

Energy losses include “tail”

Gate Charge

(VCC = 300 Vdc, IC = 0.3 Adc,

VGE = 15 Vdc)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

td(off)

tf

Eoff

td(off)

tf

Eoff

QT

—

28

—

ns

—

150

—

—

3.25

4.25

mJ

—

21

—

ns

—

280

—

—

8.0

10

mJ

—

6.4

—

nC

2

Motorola Power Products Division Technical Data

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