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MMG3004NT1 データシートの表示(PDF) - Freescale Semiconductor

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MMG3004NT1 Datasheet PDF : 21 Pages
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3004NT1 is a General Purpose Amplifier that is internally
prematched and designed for a broad range of Class A, small- signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small - signal RF.
Features
Frequency: 400 - 2200 MHz
P1dB: 27 dBm @ 2140 MHz
Small - Signal Gain: 16 dB @ 2140 MHz
Third Order Output Intercept Point: 44 dBm @ 2140 MHz
Single 5 Volt Supply
Internally Prematched to 50 Ohms
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Document Number: MMG3004NT1
Rev. 3, 3/2008
MMG3004NT1
400 - 2200 MHz, 16 dB
27 dBm
InGaP HBT
CASE 1543 - 03
PQFN 5x5
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol 900 1960 2140 Unit
MHz MHz MHz
Small - Signal Gain
(S21)
Gp
19.5 16.5 16 dB
Input Return Loss
(S11)
IRL - 7.5 - 8
- 8 dB
Output Return Loss
(S22)
ORL
- 10 - 12 - 12 dB
Power Output @1dB P1db 27 27 27 dBm
Compression
Third Order Output
Intercept Point
IP3
44 44
1. VDC = 5 Vdc, TC = 25°C, 50 ohm system
44 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
VDC
6
V
Supply Current
IDC
400
mA
RF Input Power
Pin
18
dBm
Storage Temperature Range
Tstg - 65 to +150 °C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C)
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
RθJC
33
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3004NT1
1

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