MMG3004NT1 データシートの表示（PDF） - Freescale Semiconductor

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MMG3004NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

−30

VDC = 5 Vdc, f = 900 MHz

Single−Carrier IS−95, 9 Channel Forward

−35 750 kHz Measurement Offset

30 kHz Measurement Bandwidth

−40

−45

−50

TC = 85°C

25°C

−55

−40°C

19

21

23

25

27

29

Pout, OUTPUT POWER (dBm)

Figure 12. IS - 95 Adjacent Channel Power Ratio

versus Output Power

−40

VDC = 5 Vdc, f = 900 MHz

Single−Carrier IS−95, 9 Channel Forward

885 kHz Measurement Offset

30 kHz Measurement Bandwidth

−50

−60 TC = 85°C

−70

25°C −40°C

−80

17

19

21

23

25

27

Pout, OUTPUT POWER (dBm)

Figure 13. IS - 95 Adjacent Channel Power Ratio

versus Output Power

MMG3004NT1

8

RF Device Data

Freescale Semiconductor

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