DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MT28F800B3SG-9B データシートの表示(PDF) - Micron Technology

部品番号
コンポーネント説明
メーカー
MT28F800B3SG-9B
Micron
Micron Technology Micron
MT28F800B3SG-9B Datasheet PDF : 30 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F800B3)1
FUNCTION
RP# CE#
Standby
HH
RESET
LX
READ
READ (word mode)
HL
READ (byte mode)
HL
Output Disable
HL
WRITE/ERASE (EXCEPT BOOT BLOCK)2
ERASE SETUP
ERASE CONFIRM3
HL
HL
WRITE SETUP
HL
WRITE (word mode)4
HL
WRITE (byte mode)4
HL
READ ARRAY5
HL
WRITE/ERASE (BOOT BLOCK)2, 7
ERASE SETUP
ERASE CONFIRM3
ERASE CONFIRM3, 6
HL
VHH L
HL
WRITE SETUP
HL
WRITE (word mode)4
WRITE (word mode)4, 6
VHH L
HL
WRITE (byte mode)4
WRITE (byte mode)4, 6
VHH L
HL
READ ARRAY5
HL
DEVICE IDENTIFICATION8, 9
Manufacturer Compatibility
(word mode)10
HL
Manufacturer Compatibility
(byte mode)
HL
Device (word mode, top boot)10
HL
Device (byte mode, top boot)
HL
Device (word mode, bottom boot)10 H L
Device (byte mode, bottom boot) H L
OE# WE# WP# BYTE# A0 A9
X X X X XX
X X X X XX
VPP DQ0–DQ7 DQ8–DQ14 DQ15/A - 1
X High-Z High-Z High-Z
X High-Z High-Z High-Z
L H X H X X X Data-Out Data-Out Data-Out
L H X L X X X Data-Out High-Z A-1
H H X X X X X High-Z High-Z High-Z
H L X X X X X 20h
X
X
H L X X X X VPPH D0h
X
X
H L X X X X X 10h/40h X
X
H L X H X X VPPH Data-In Data-In Data-In
H L X L X X VPPH Data-In
X
A-1
H L X X XX X
FFh
X
X
H L X X X X X 20h
X
X
H L X X X X VPPH D0h
X
X
H L H X X X VPPH D0h
X
X
H L X X X X X 10h/40h X
X
H L X H X X VPPH Data-In Data-In Data-In
H L H H X X VPPH Data-In Data-In Data-In
H L X L X X VPPH Data-In
X
A-1
H L H L X X VPPH Data-In
X
A-1
H L X X XX X
FFh
X
X
L H X H L VID X
89h
00h
L H X L L VID X
89h High-Z
X
L H X H H VID X
9Ch
88h
L H X L H VID X
9Ch High-Z
X
L H X H H VID X
9Dh
88h
L H X L H VID X
9Dh High-Z
X
NOTE: 1. L = VIL (LOW), H = VIH (HIGH), X = VIL or VIH (“Don’t Care”).
2. VPPH = VPPH1 = 3.3V or VPPH2 = 5V.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = VIH, RP# may be at VIH or VHH.
7. VHH = 12V.
8. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command.
9. A1–A8, A10–A18 = VIL.
10. Value reflects DQ8–DQ15.
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]