MT46V128M4TG-8 データシートの表示（PDF） - Micron Technology

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MT46V128M4TG-8

512Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

ADVANCE

512Mb: x4, x8, x16

DDR SDRAM

PIN DESCRIPTIONS (continued)

TSOP PIN NUMBERS SYMBOL

2, 5, 8, 11, 56, 59, 62, 65 DQ0-7

5, 11, 56, 62

DQ0-3

51

16, 51

DQS

LDQS, UDQS

TYPE

I/O

I/O

I/O

50

3, 9, 15, 55, 61

6, 12, 52, 58, 64

1, 18, 33

34, 48, 66

49

14, 17, 19, 25, 43, 53

DNU

VDDQ

VSSQ

VDD

VSS

VREF

NC

–

Supply

Supply

Supply

Supply

Supply

–

DESCRIPTION

Data Input/Output: Data bus for x8 (2, 8, 59 and 65 are NC for x4).

Data Input/Output: Data bus for x4.

Data Strobe: Output with read data, input with write data. DQS is

edge-aligned with read data, centered in write data. It is used to

capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS is

DQS for DQ8-DQ15. Pin 16 is NC on x4 and x8.

Do Not Use: Must float to minimize noise.

DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved

noise immunity.

DQ Ground. Isolated on the die for improved noise immunity.

Power Supply: +2.5V ±0.2V.

Ground.

SSTL_2 reference voltage.

No Connect: These pins should be left unconnected.

RESERVED NC PINS1

TSOP PIN NUMBERS SYMBOL TYPE

DESCRIPTION

17

A13

I

Address input for 1Gb devices.

NOTE: 1. NC pins not listed may also be reserved for other uses now or in the future. This table simply defines specific NC pins

deemed to be of importance.

512Mb: x4, x8, x16 DDR SDRAM

512Mx4x8x16DDR_B.p65 – Rev. B; Pub 4/01

8

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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