MT46V128M4 データシートの表示（PDF） - Micron Technology

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MT46V128M4

Double Data Rate (DDR) SDRAM

Micron Technology 

512Mb: x4, x8, x16 DDR SDRAM

Functional Block Diagrams

Functional Block Diagrams

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory

containing 536,870,912 bits. It is internally configured as a 4-bank DRAM.

Figure 3: 128 Meg x 4 Functional Block Diagram

CKE

CK#

CK

CS#

WE#

CAS#

RAS#

CONTROL

LOGIC

BANK3

BANK2

BANK1

MODE REGISTERS

15

A0–A12,

BA0, BA1

15

ADDRESS

REGISTER

REFRESH 13

COUNTER

ROW-

13

ADDRESS

MUX

13

BANK0

ROW-

ADDRESS

LATCH

&

DECODER

8192

BANK0

MEMORY

ARRAY

(8,192 x 2,048 x 8)

SENSE AMPLIFIERS

16384

2

BANK

CONTROL

LOGIC

2

COLUMN-

ADDRESS

11

12

COUNTER/

LATCH

1

I/O GATING

DM MASK LOGIC

8

2048

(x8)

COLUMN

DECODER

CK

4

8

READ

LATCH 4

MUX

COL0

MASK

WRITE

8

FIFO

2

&

DRIVERS

8

CK CK

Out In DATA

DATA

DLL

4

DQS

GENERATOR

DRVRS

1

INPUT

REGISTERS

1

1

1

1

4

4

4

4

DQS

1

RCVRS

4

CK

1

COL0

DQ0–DQ3

DQS

DM

PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a

512Mb_DDR_x4x8x16_D2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000 Micron Technology, Inc. All rights reserved.

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