MTSF3203R2 データシートの表示（PDF） - Motorola => Freescale

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MTSF3203R2

TMOS Single P-Channel Field Effect Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0)

(1) (3)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk ≥ 2.0)

(3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

1.0

—

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 4.9 Adc)

(VGS = 2.5 Vdc, ID = 3.9 Adc)

(Cpk ≥ 2.0)

(3)

RDS(on)

—

—

Forward Transconductance (VDS = 10 Vdc, ID = 4.9 Adc)

gFS

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

td(on)

—

Rise Time

Turn–Off Delay Time

(VDS = 10 Vdc, ID = 4.9 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

tr

—

td(off)

—

Fall Time

tf

—

Turn–On Delay Time

td(on)

—

Rise Time

Turn–Off Delay Time

(VDD = 10 Vdc, ID = 3.9 Adc,

VGS = 2.5 Vdc, RG = 6 Ω) (1)

tr

—

td(off)

—

Fall Time

tf

—

Gate Charge

QT

—

(VDS = 10 Vdc, ID = 4.9 Adc,

VGS = 4.5 Vdc)

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.5 Adc, VGS = 0 Vdc) (1)

(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

(IS = 1.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

trr

—

ta

—

tb

—

Reverse Recovery Storage Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

Typ

—

TBD

—

—

—

TBD

TBD

TBD

TBD

—

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

TBD

MTSF3203

Max

Unit

Vdc

—

—

mV/°C

µAdc

1.0

25

100

nAdc

Vdc

—

—

mV/°C

mΩ

40

50

—

Mhos

—

pF

—

—

—

ns

—

—

—

—

ns

—

—

—

TBD

nC

—

—

—

Vdc

1.0

—

—

ns

—

—

—

µC

Motorola TMOS Power MOSFET Transistor Device Data

3

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